PART |
Description |
Maker |
FS50UMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
|
2SJ549 2SJ549L 2SJ549S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|
HAT1055R HAT1055RJ |
Transistors>Switching/MOSFETs Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
BD9120HFN BD9106FVM BD9106FVM09 BD9107FVM BD9109FV |
2 A SWITCHING REGULATOR, 1200 kHz SWITCHING FREQ-MAX, PDSO8 5 X 6 MM, ROHS COMPLIANT, SON-8 High-efficiency Step-down Switching Regulators with Built-in Power MOSFET
|
Rohm
|
GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http:// Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1202L-R-TN3-K |
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252 HIGH CURRENT SWITCHING APPLICATION 大电流开关应 HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126 HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-251
|
UTC[Unisonic Technologies] 友顺科技股份有限公司 Unisonic Technologies Co., Ltd. UNISONIC TECHNOLOGIES CO LTD ??『绉???′唤??????
|
MP4403 E002514 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
LTC1697 LTC1697EMS LTC1697EMSPBF |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS High Efficiency Low Power 1W CCFL Switching Regulator
|
LINEAR TECHNOLOGY CORP
|
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor Toshiba Corporation
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